Naprotek, LLC.
Company desNaprotek is an electronics solutions provider for high-reliability products in the Defense, Space, Medical, and Semiconductor Capital Equipment markets and select applications in Test & Instrumentation and Advanced Technology. Capabilities include quick-turn printed circuit board assembly, prototyping, RF components, microelectronics, system integration, and test services.cription.
, San Jose CA
United States
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Schottky Barrier Bridge Quads
SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled capacitance which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches.
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Filters
In order to minimize filter roll-off, we start with a quality, highly polished substrate and apply layers of metallization within tight tolerances. Our highly anisotropic ion beam etching process enables us to produce features down to 10 microns. Furthermore, the milling process yields a high consistency from circuit to circuit meaning that whether we produce 1 or 100,000 filters, each one will have consistent filter roll-off characteristics.
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Beam Lead PIN Diodes
The SemiGen SBL 2000 series Beam Lead PIN Diodes feature fast switching speeds at both low capacitance and resistance. Beam Lead PIN Diodes have high levels of mechanical strength and stability during assembly. These diodes are suitable for microstrip or stripline circuits as well as circuits requiring high isolation from a series of mounted diodes such as multi-throw switches, phase shifters, attenuators and modulators.
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Point Contact Diodes
SemiGen’s 1N Series of Point Contact Mixer Diodes are designed for applications through KA band. Each device in this series is specially designed for low noise gure, impedance and VSWR. Our devices are drop in replacements for all military and commercial requirements. These diodes employ epitaxial silicon grown in a speci c reactor for optimized performance. They are suitable for use in stripline applications.
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Attenuators
The 01311 attenuator chip series is designed to achieve precision and tight flatness with an attenuation accuracy of ± 0.2 dB on our 1-10 dB pads and ± 0.3 dB on our 11-20 dB pads. SemiGen tests 100% of all attenuator chips prior to shipment to verify that they meet specifications.
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Limiter Diodes
The SemiGen SLP7100 series of Limiter Diodes are processed with a high-resistivity epi that have thin intrinsic layers. These devices are typically in the 2 to 20 micron range of epi thickness and can be gold doped to achieve specific performance goals. These diodes are used in passive or active limiter designs in the 100 MHz to 30 GHz frequency ranges. They are ideal for use in high-power applications and can be supplied in chip form or in your choice of packages below.
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MIS Capacitors
The SemiGen 8000 and 8100 series of MIS Capacitors are available in a wide variety of capacitance ranges and sizes. They are made with prime starting material and consist of an Oxide/Nitride layer that provides low dielectric loss and high standoff voltage. These RF microwave chip capacitor products are available in chip form only.
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Thin Film Circuits
SemiGen offers build-to-print services for a wide range of materials and metallization schemes. We use our processing technology to fabricate circuits on As-Fired Alumina, Polished Alumina, Superstrate TPS, Aluminum Nitride, Beryllium Oxide, Fused Silica/Quartz, Sapphire, and Hi-K Dielectrics.
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Transmission Lines
SemiGens 50-ohm Transmission Lines offer the RF/microwave designer complete flexibility and repeatability for the most challenging applications.
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PIN Diodes
The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide passivation or ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages.
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Schottky Diodes
SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled capacitance which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches.
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Schottky Barrier Ring Quads
SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled capacitance which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches.
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Step Recovery Diodes
SemiGen’s SSR series of Step Recovery Diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications. Using custom epitaxial wafers, our process ensures high reproducibility. The silicon dioxide passivation process assures greater stability and low leakage currents over temperature. Uniform capacitance ensures repeatability from device to device. These diodes are available in chip or packaged form.
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Diode Submounts
Ultra-precise patterning of thin film metals on dielectrics with high thermal conductivity are used for diode submount applications. Via the acquisition of Ion Beam Milling, Inc., SemiGen is the industry leader for laser diode submount fabrication. As each application is different, we work with customers to develop a custom design that perfectly fits their requirements. We have experience producing circuits utilizing substrates of varying thicknesses with high thermal conductivity such as alumina (Al), aluminum nitride (AlN), and beryllium oxide (BeO). SemiGen can deliver laser diode submounts with or without Au/Sn pads depending on your needs.
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Standoff Capacitors
In standoff capacitors, SemiGen offers controlled dielectric thicknesses of +/- 12 microns, < 0.1 micron mounting surface finishes, and outline (L&W) tolerances of < 25 microns. We assure lot-to-lot repeatability and very attractive pricing. RF engineers requiring jumper mounts, bypass and tuning capacitor flexibility will find our wide selection of standoff capacitors convenient and reliable.